High power led chip 1W 3W 10W 30W 50W 80W 100W 620nm,,630nm,640nm,660nm for plant growth lights
P100WR1410001005A
1 piece
Zhongshan or Shenzhen or Guangzhou
Quantity

High power led chip Super red 1W 3W 10W 30W 50W 80W 100W 660nm,640nm,630nm,620nm for plant growth lights

Features of Red high power led chip :

1. High lumens and high rendering index;

2. Very long operating life and low light decline;

3. Wavelength &color temperature: Red 620-630nm 630-640nm 650-660nm,730-740nm, Yellow&Amber 588-594nm 600-610nm, Blue 420-430nm,440-450nm,450-460nm,460-470nm, Green:515-525nm,2600-2800K,2800-3000K 3000-3200K,4000-4500K,4500-5000K,5500-6000K,6000-7000K are available ;

5.Power :1W,3W,5W,10W,20W,30W,50W,60W,70W,80W,100W,150W,200W can be prodution for you .

6. Chip brand: Epiled, Epistar, Bridgelux, Cree (Optional)

7. Low voltage Dc operated, safe to the touch and testing;

8. More energy efficient than incandescent and most halogen lamps;

9. High quality and high brightness are good for your lighting product.

Electrical Optical Characteristics of Red 630-640nm 30W high power led chip

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Forward Voltage

VF

20

---

24

v

If=1050mA

Reverse Current

IR

---

---

10

uA

VR=50v

50% Power Angle

2θ1/2

---

160

---

deg

IF=1050mA

Luminous Intensity

φV

1500

--

1800

lm

IF=1050mA

Wavelength

WL

630

---

640

NM

IF=1050mA

Electrical Optical Characteristics of super red 660nm 50W high power led chip

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Forward Voltage

VF

20

---

24

v

If=1750mA

Reverse Current

IR

---

---

10

uA

VR=50v

50% Power Angle

2θ1/2

---

160

---

deg

IF=1750mA

Luminous Intensity

φV

2000

---

2400

lm

IF=1750mA

Wavelength

WL

655

660

665

NM

IF=1750mA

Electrical Optical Characteristics of 100w high power led chip red 620-630nm

 

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Forward Voltage

VF

20

---

24

v

If=3500mA

Reverse Current

IR

---

---

10

uA

VR=50v

50% Power Angle

2θ1/2

---

160

---

deg

IF=3500mA

Luminous Intensity

φV

5000

--

6000

lm

IF=3500mA

Wavelength

WL

620

---

630

NM

IF=3500mA

Notes:1.Tolerance of measurement of forward voltage±0.1V.

2. Tolerance of measurement of color temperature±100K.

3. Tolerance of measurement of luminous intensity±15%.